high energy electron diffraction meaning in Chinese
高能电子衍射
Examples
- Reflection high energy electron diffraction method
反射高能电子绕射法 - The ultra - thin er layers with the thicanesses in the range of 0 . 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system . after annealing at lower temperatures , ordered simcfores form on the surface . the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )
本文是关于硅( 001 )衬底与电子束淀积的铒、铪原子反应形成的超薄膜的界面与表面性质的研究，以及在该衬底上出现的共振光电子发射现象，包括了以下四个方面的工作： 1铒导致的硅( 001 )衬底上的( 4 2 )再构研究利用反射高能电子衍射和低能电子衍射，在室温淀积了0 - Besides , the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ) . the rheed images and intesity oscillation are collected by computer system . it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500 . atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature . the analysis were compared to simulation results . the experiment results indicated it was easy to form clusters when the rate of growth is high or
此外,本文通过反射式高能电子衍射( rheed )监测了gasb外延薄膜的生长,利用rheed强度振荡的计算机采集系统实现了rheed图像和rheed强度振荡的实时监测。实验发现在400生长的gasb薄膜为非晶态,温度升高到500薄膜转变为单晶。利用原子力显微镜对不同生长速率和衬底温度生长的gasb薄膜的表面形貌进行观察分析,并与模拟结果进行比较。